2N7002-HF (n-channel) qw -jtr03 page 1 rev :b features -power dissipation : 0.35w equivalent circuit d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 2 3 d g s 0.083(2.10) 0.066(1.70) 0.056(1.40) 0.047(1.20) 0.1 19(3.00) 0.1 10(2.80) 0.006(0.15)max 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.007(0.20)min 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) symbol parameter v alue unit maximum ratings (at t a=25c) drain-source voltage drain current power dissipation junction and storage temperature g : gate s : source d : drain v ds i d p d t j , t stg 60 250 350 -55 ~ +150 v ma mw c symbol parameter conditions t yp max unit electrical characteristi cs (at t a=25c unless otherwise noted) drain-source breakdown voltage gate-threshold voltage gate-body leakage zero gate voltage drain current on-state drain current drain-source on resistance forward tran conductance diode forward voltage t otal gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance t urn-on time t urn-of f time v gs =0v , i d =10 a v ds =v gs , i d =250 a v ds =0v , v gs =15v v ds =60v , v gs =0v v ds =60v , v gs =0v , t j =125c v gs =10v , v ds =7.5v v gs =4.5v , v ds =10v v gs =10v , i d =250ma v gs =4.5v , i d =200ma v ds =15v , i d =200ma i s =200ma, v gs =0v v ds =30v , v gs =10v , i d =250ma v ds =25v , v gs =0v , f=1mhz v dd =30v , r l =200 i d =100ma, v gen =10v r g =10 min v (br)dss v th(gs) i gss i dss i d(on) r ds(on) g ts v sd q g q gs q gd c iss c oss c rss t d(on) t r t d(off) 60 1 800 500 70 1.5 1300 700 1.5 2.0 300 0.85 0.6 0.06 0.06 25 6 1.2 7.5 6 7.5 2.5 10 1 500 3 4 1.2 1.0 20 20 v na a ma ms v nc pf ns g s d comchip t echnology co., l td. mosfet rohs device halogen free
ra ting and characteristic cur ves (2N7002-HF) page 2 qw -jtr03 fig.1 on-region characteristics 0 i d , d r a i n - s o u r c e c u r r e n t ( a ) v ds , drain-source v oltage(v) 0 2 5 0 . 8 fig.2 on-resistance vs drain current 0 r d s ( o n ) , n o r m a l i z e d d r a i n - s o u r c e o n - r e s i s t a n c e i d , drain current (a) 0 0 . 2 0 . 8 1 . 0 1 2 3 fig.3 on-resistance vs junction t emperature 0 r d s ( o n ) , n o r m a l i z e d d r a i n - s o u r c e o n - r e s i s t a n c e o t j , junction t emperature ( c) - 5 5 0 . 5 2 . 0 2 0 1 3 0 . 4 4 5 v gs = 5.0v o t = 25c j v gs = 10v i d = 50ma i d = 500ma v gs =10v 9.0v 8.0v 7.0v 6.5v 6.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v 5.5v 5.0v 4 0 . 2 0 . 4 0 . 6 1 . 0 0 . 6 6 7 fig.4 on-resistance vs gate-source v oltage 0 r d s ( o n ) , n o r m a l i z e d d r a i n - s o u r c e o n - r e s i s t a n c e v gs , gate to source v oltage (v) 0 4 1 4 1 8 1 2 3 8 4 5 1 2 6 2 1 6 6 1 0 - 3 0 - 5 4 5 1 2 0 7 0 9 5 1 4 5 1 . 0 1 . 5 v gs =10v , i d =0.5a v gs =5v , i d =0.05a comchip t echnology co., l td. rev :b mosfet
comchip t echnology co., l td. page 3 qw -jtr03 rev :b b c d d d 2 d 1 e f p p 0 p 1 s o t - 2 3 s y m b o l a w w 1 ( m m ) ( i n c h ) 0 . 1 2 2 0 . 0 0 4 0 . 1 1 2 0 . 0 0 4 0 . 0 5 5 0 . 0 0 4 0 . 0 6 1 0 . 0 0 4 7 . 0 0 8 0 . 0 4 1 . 9 6 9 m i n . 0 . 5 1 2 0 . 0 0 8 s o t - 2 3 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 2 0 . 3 1 5 0 . 0 1 2 0 . 5 6 7 m a x . 3 . 1 0 0 . 1 0 2 . 8 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 0 . 1 0 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 5 0 . 0 m i n . 1 3 . 0 0 . 2 0 1 . 4 0 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 8 . 0 0 0 . 3 0 1 4 . 4 m a x . 1 7 8 1 mosfet o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification i n d e x h o l e d e f b w p p 0 p 1 a
comchip t echnology co., l td. mosfet page 4 qw -jtr03 rev :b part number 2N7002-HF marking code 7002 marking code 7002 3 1 2 suggested p ad layout size (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 sot -23 2.82 0.1 1 1 a b c d standard packaging case t ype qty per reel (pcs) 3000 sot -23 reel size (inch) 7 a c b d
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